Description Atomic number of base material: 40 ZirconiumAdvanced precursor for atomic layer deposition of ZrO2thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications. Excellent properties of HfO2and ZrO2films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.Precursors Packaged for Depositions Systems Description Atomic number of base material: 40 ZirconiumAdvanced precursor for atomic layer deposition of ZrO2thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications. Excellent properties of HfO2and ZrO2films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.Precursors Packaged for Depositions Systems
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Bis(methyl-η⁵−cyclopentadienyl)methoxymethylzirconium
CAS number：MFCD16875687 molecular formula：
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| Chinese alias | - | ||
| English alias | ZrD-CO₄, ZRCMMM | ||
| CAS number | MFCD16875687 | molecular formula | |
| molecular weight | - | Exact mass | 包装用于沉积系统 |
| PSA | - | logp | - |
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