compound introduction
生长方法: CVD 转移方法:湿法转移 外观:透明的石墨烯膜在基底上 透光率: >97% 单层覆盖率: >95% 石墨烯膜厚度(理论值) : 0.345nm 尺寸: 1cm*1cm 方块电阻: 300-600 Ω/sq 铜基底参数： 纯度：99.99% 厚度：30μm PMMA：分子量：3000万， 固含量为6%左右 速度为慢速200转/min 10秒 快度800转/min 10秒。 Growth method: CVD Transfer method: Wet transfer Appearance: Transparent graphene film on substrate Transmittance:> 97% Single layer coverage:> 95% Graphene film thickness (theoretical value): 0.345nm Size: 1cm*1cm Block resistance: 300-600 Ω/sq Copper substrate parameters: Purity: 99.99% Thickness: 30 μ m PMMA： Molecular weight: 30 million, solid content of about 6%. The speed is slow at 200 r/min for 10 seconds and fast at 800 r/min for 10 seconds.
