钽的氮化物,以1:1结构为主 antalum nitride is used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications. antalum nitride is used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.
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Tantalum nitride
Dangerous GoodsCAS number:12033-62-4 molecular formula:TaN
overview
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Specs
| Chinese alias | 一氮化钽 | ||
| English alias | DTXSID6065183 | Tantalum nitride (TaN) | Tantalum mononitride | Tantalum nitride | azanylidynetantalum | EINECS 234-788-4 | Q415489 | MFCD00049568 | FT-0695184 | tantalum(III) nitride | ||
| CAS number | 12033-62-4 | molecular formula | TaN |
| molecular weight | 194.95 g/mol | Exact mass | ≥99.5% metals basis |
| PSA | 23.800 Ų | logp | - |
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WGK Germany:
3
Personal protective equipment:
Eyeshields, Gloves, type N95 (US), type P1 (EN143) respirator filter
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