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Tetrakis(dimethylamido)hafnium(IV)

Dangerous Goods

CAS number：19782-68-4    molecular formula：C8H24HfN4

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Specs
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physicochemical properties
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overview

compound introduction

铪烷基酰胺是制备平滑非晶氧化铪薄膜的一种简便有效的原子层沉积前驱体。 应用 用作氧化铪纳米层压板的原子层沉积的前体，其用作半导体器件中的氧化硅的替换物。为沉积系统包装的前体['为沉积系统包装的前体 Alkyl amides of Hafnium provide a convenient and effective atomic layer deposition precursor to smooth and and amorphous hafnium oxide thin films.Used as precursor for atomic layer deposition of Hafnium Oxide nanolaminates, which are used as a reploacement for Silicon oxide in semiconductor devices.Precursors Packaged for Depositions Systems

Specs

Chinese alias-
English aliasTetrakis(dimethylamido)hafnium(IV), >=99.99% | MFCD01862473 | SCHEMBL54871 | Tetrakis(dimethylamino)hafnium(IV) 99.999% | Tetrakis(dimethylamido)hafnium(IV) | Tetrakis(dimethylamino)hafnium(IV) | TDMAH | Hafnium, tetrakis(dimethylamino)- | Tetrakis(dimeth
CAS number19782-68-4molecular formulaC8H24HfN4
molecular weight354.79 g/molExact mass包装用于沉积系统
PSA4.000 Ųlogp-

numbering system

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physicochemical properties

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Safety information

pictogram：
GHS05 , GHS02
Signal word：
Danger
Hazard Statement：
H228: 易燃固体 H261: 与水接触释放出易燃气体
Statement of Preventive Measures：
P280: 戴防护手套/穿防护服/戴防护眼罩/戴防护面具。 P231+P232: 在惰性气体中操作。防潮。 P370+P378: 火灾时：使用干砂、干粉或抗醇泡沫灭火。 P210: 远离热源，热表面，火花，明火和其他点火源。 - 禁止抽烟。 P321: 特殊处理（请参阅此标签上的...）。 P405: 密闭存放 P501: 将内容物/容器处理到。。。 P240: 地面/粘结容器和接收设备 P264: 处理后要彻底洗手。 P260: 不要吸入灰尘/烟雾/气体/雾/蒸汽/喷雾。 P241: 使用防爆的[电气/
UN Number：
3396

Production methods and uses

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MSDS

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19782-68-4 | Tetrakis(dimethylamido)hafnium(IV).pdf