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Product introduction

应用 Precursor for the deposition of tungsten carbide and -nitride by atomic layer deposition. Precursors Packaged for Depositions Systems['Precursors Packaged for Depositions Systems General Description Atomic number of base material: 74 Tungsten Application Precursor for the deposition of tungsten carbide and -nitride by atomic layer deposition. Precursors Packaged for Depositions Systems

Specs ⸢ View details ⸥

Chinese name

双(叔丁基亚氨基)双(二甲基氨基)钨(VI)

English name

Bis(tert-butylimino)bis(dimethylamino)tungsten(VI)

Chinese alias

English alias

Bis(tert-butylimino)bis(dimethylamino)tungsten(VI), 97%, 99.99% trace metals basis | Bis(tert-butylimino)bis(dimethylamino)tungsten(VI) | Bis(tert-butylimino)bis(dimethylamino)tungsten(VI), packaged for use in deposition systems | MFCD07369712 | SCHEMBL60

CAS number

406462-43-9

molecular formula

C12H30N4W

molecular weight

414.23 g/mol

Exact mass

包装用于沉积系统

PSA

26.700 Å²

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Research chemical 99. 99%; metals basis; 1g

Name: Research chemical 99. 99%; metals basis; 1g
Brand: 阿拉丁
SKU: B283065-1g

Research chemical 99. 99%; metals basis; 1g; supplied for laboratory research, analysis, inspection, and scientific procurement use; specifications: 99. 99%; metals basis; 1g.

item number：B283065-1g

Product model：1g

level： 99. 99%; metals basis; 1g

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Research chemical 99. 99%; metals basis; 1g

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