应用 Hafnium tert -butoxide [Hf(OtBu) 4 ] is a mononuclear; volatile; and highly promising precursor for the deposition of HfO 2 and other hafnium doped thin films by vapor deposition techniques. The deposited films show high dielectric constant suitable for semiconductor devices. Application Hafnium tert -butoxide [Hf(OtBu) 4 ] is a mononuclear; volatile; and highly promising precursor for the deposition of HfO 2 and other hafnium doped thin films by vapor deposition techniques. The deposited films show high dielectric constant suitable for semiconductor devices.