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Product introduction
钽的氮化物,以1:1结构为主 antalum nitride is used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications. antalum nitride is used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.
Chinese name
氮化钽
English name
Tantalum nitride
Chinese alias
一氮化钽
English alias
DTXSID6065183 | Tantalum nitride (TaN) | Tantalum mononitride | Tantalum nitride | azanylidynetantalum | EINECS 234-788-4 | Q415489 | MFCD00049568 | FT-0695184 | tantalum(III) nitride
CAS number
12033-62-4
molecular formula
TaN
molecular weight
194.95 g/mol
Exact mass
≥99.5% metals basis
PSA
23.800 Ų
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Research chemical CAS 12033-62-4 ≥99. 5% 50g

Research chemical CAS 12033-62-4 ≥99. 5% 50g, complete specifications; suitable for production, research, laboratory testing and inspection; digital one-stop procurement platform for scientific materials.

item number:S41404-50g
Product model:50g
level: ≥99.5% 50g
Lead Time:30days
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