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Product introduction
钽的氮化物,以1:1结构为主 antalum nitride is used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications. antalum nitride is used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.
Chinese name
氮化钽
English name
Tantalum nitride
Chinese alias
一氮化钽
English alias
DTXSID6065183 | Tantalum nitride (TaN) | Tantalum mononitride | Tantalum nitride | azanylidynetantalum | EINECS 234-788-4 | Q415489 | MFCD00049568 | FT-0695184 | tantalum(III) nitride
CAS number
12033-62-4
molecular formula
TaN
molecular weight
194.95 g/mol
Exact mass
≥99.5% metals basis
PSA
23.800 Ų
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Research chemical 10g; ≥99. 5%; metals basis

Research chemical 10g; ≥99. 5%; metals basis; supplied for laboratory research, analysis, inspection, and scientific procurement use; specifications: 10g; ≥99. 5%; metals basis.

item number:T119195-10g
Product model:10g
level: 10g; ≥99. 5%; metals basis
Lead Time:30days
sold 109 Items
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10g

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