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Product introduction

铪烷基酰胺是制备平滑非晶氧化铪薄膜的一种简便有效的原子层沉积前驱体。应用用作氧化铪纳米层压板的原子层沉积的前体，其用作半导体器件中的氧化硅的替换物。为沉积系统包装的前体['为沉积系统包装的前体 Alkyl amides of Hafnium provide a convenient and effective atomic layer deposition precursor to smooth and and amorphous hafnium oxide thin films.Used as precursor for atomic layer deposition of Hafnium Oxide nanolaminates, which are used as a reploacement for Silicon oxide in semiconductor devices.Precursors Packaged for Depositions Systems

Specs ⸢ View details ⸥

Chinese name

四（二甲基酰胺基）铪（IV）

English name

Tetrakis(dimethylamido)hafnium(IV)

Chinese alias

English alias

CAS number

19782-68-4

molecular formula

C8H24HfN4

molecular weight

354.79 g/mol

Exact mass

包装用于沉积系统

PSA

4.000 Å²

Logp

Technical Documents

19782-68-4 | Tetrakis(dimethylamido)hafnium(IV).pdf
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