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Product introduction

应用四（二甲基氨基）锆 (IV)可用作锆原子层沉积的前驱物，其应用范围从气体传感器到微电子学中的高k电介质。 Application Tetrakis(dimethylamido) zirconium (IV) may be used as a precursor for atomic layer deposition of zirconium which find applications ranging from gas sensors to high-k dielectrics in microelectronics.

Specs ⸢ View details ⸥

Chinese name

四(二甲基胺基)锆(IV)

English name

Tetrakis(dimethylamido)zirconium(IV)

Chinese alias

TDMAZ, 四(二甲基氨基)锆(IV)

English alias

Tetrakis(dimethylamido)zirconium(IV), deposition grade | TDMAZ | Tetrakis(dimethylamino)zirconium(IV), 99% (99.99%-Zr) TDMAZ, contained in 50ml Swagelok? cylinder for CVD/ALD | SCHEMBL77142 | Tetrakis(dimethylamido)zirconium(IV), packaged for use in depos

CAS number

19756-04-8

molecular formula

[(CH3)2N]4Zr

molecular weight

267.53 g/mol

Exact mass

PSA

4.000 Å²

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Technical Documents

19756-04-8 | Tetrakis(dimethylamido)zirconium(IV).pdf
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Research chemical CAS 19756-04-8 ≥99. 99% 1g

Name: Research chemical CAS 19756-04-8 ≥99. 99% 1g
Brand: 源叶
SKU: Y30163-1g

Yuanye Research chemical CAS 19756-04-8 ≥99. 99% 1g, complete specifications; suitable for production, research, laboratory testing and inspection; digital one-stop procurement platform for scientific materials.

item number：Y30163-1g

Product model：1g

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Research chemical CAS 19756-04-8 ≥99. 99% 1g

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